Datasheet > 2SA0921|2SA921

2SA0921|2SA921

更新时间： 2024-11-22 23:19:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管信号器
页数	文件大小	规格书
3页	81K
描述
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

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2SA0921|2SA921 数据手册

Transistors

2SA0921 (2SA921)

Silicon PNP epitaxial planar type

For high breakdown voltage low-noise amplification

Complementary to 2SC1980

Unit: mm

5.0 0.2

4.0 0.2

■ Features

• High collector-emitter voltage (Base open) V_CEO

• Low noise voltage NV

0.7 0.1

■ Absolute Maximum Ratings T_a= 25°C

+0.15

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

−120

−5

Unit

0.45

–0.1

+0.6

2.5

–0.2

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

2.5

–0.2

2 3

1: Emitter

2: Collector

3: Base

−20

°C

Peak collector current

I_CP

−50

TO-92-B1 Package

Collector power dissipation

Junction temperature

P_C

250

T_j

150

Storage temperature

T_stg

−55 to +150

°C

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

Min

−120

−5

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio ^*

Collector-emitter saturation voltage

Transition frequency

I_C= −10 µA, I_E= 0

I_C= −1 mA, I_B= 0

I_E= −10 µA, I_C= 0

V_CB= −50 V, I_E= 0

V_CE= −50 V, I_B= 0

V_CE= −5 V, I_C= −2 mA

−100

−1

µA



I_CEO

h_FE

180

700

V_CE(sat)I_C= −20 mA, I_B= −2 mA

− 0.6

f_T

V_CB= −5 V, I_E= 2 mA, f = 200 MHz

200

MHz

Noise voltage

V_CE= −40 V, I_C= −1 mA, G_V= 80 dB

R_g= 100 kΩ, Function = FLAT

150

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE

180 to 360

260 to 520

360 to 700

Note) The part number in the parenthesis shows conventional part number.

Publication date: January 2003

SJC00007BED

12 3

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与2SA0921|2SA921相关器件

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2SA0921R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 20MA I(C) \| TO-92
2SA0921S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 20MA I(C) \| TO-92
2SA0963	PANASONIC	获取价格	For low-frequency power amplification
2SA0963(2SA963)	ETC	获取价格	パワーデバイス－パワートランジスタ－その他
2SA0963\|2SA963	ETC	获取价格	Power Device - Power Transistors - Others
2SA0963Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 1.5A I(C) \| TO-126
2SA0963R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 1.5A I(C) \| TO-126
2SA-10	ETC	获取价格	Integrated 2-Axis Hall Sensor
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